The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2023
Filed:
Jun. 18, 2021
International Business Machines Corporation, Armonk, NY (US);
Jingyun Zhang, Albany, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Alexander Reznicek, Troy, NY (US);
Bruce B. Doris, Hartsdale, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A method is presented for reducing parasitic capacitance. The method includes forming a p-type epitaxial region and an n-type epitaxial region over a substrate, depositing an epitaxial growth over the p-type epitaxial region and the n-type epitaxial region, depositing a first dielectric between the p-type epitaxial region and the n-type epitaxial region such that an airgap is defined therebetween, and selectively removing the epitaxial growth to expose top surfaces of the p-type and n-type epitaxial regions. The method further includes depositing a second dielectric in direct contact with the exposed top surfaces of the p-type and n-type epitaxial regions, selectively etching the first and second dielectrics to form a strapped contact, and applying a metallization layer over the strapped contact.