The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2023

Filed:

Feb. 18, 2021
Applicant:

Ansys, Inc., Canonsburg, PA (US);

Inventors:

Wen-Tze Chuang, Yilan County, TW;

Norman Chang, Fremont, CA (US);

Lei Yin, San Jose, CA (US);

Bolong Zhang, Tallahassee, FL (US);

Xi Chen, Chengdu, CN;

Jay Prakash Pathak, Pleasanton, CA (US);

En Cih Yang, New Taipei, TW;

Jimin Wen, Pleasanton, CA (US);

Akhilesh Kumar, Milpitas, CA (US);

Ming-Chih Shih, Taipei, TW;

Ying Shiun Li, Pleasanton, CA (US);

Assignee:

ANSYS Inc., Canonsburg, PA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06N 3/08 (2023.01); G06N 3/04 (2023.01); G06F 30/392 (2020.01); G06F 119/18 (2020.01); G06F 111/10 (2020.01);
U.S. Cl.
CPC ...
G06F 30/392 (2020.01); G06N 3/04 (2013.01); G06N 3/08 (2013.01); G06F 2111/10 (2020.01); G06F 2119/18 (2020.01);
Abstract

A specification for a semi-conductor chip is received. The specification specifies a set of photomasks associated with a metal layer of the semi-conductor chip. Multiple portions of an area of the metal layer are identified. A respective image is generated for each portion of the area based on the photomasks. A respective drawn density of metal wires for each portion of the area is calculated. A trained machine learning model is invoked to predict a respective silicon density of metal wires for each respective portion of the area based on an image and a drawn density for the respective portion of the area. A silicon density for the area of the metal layer is calculated based on a combination of predicted silicon densities for the multiple portions of the area. The combination is based on an average value of the predicted silicon densities for the multiple portions of the area.


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