The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2023

Filed:

Aug. 04, 2022
Applicant:

Shinko Electric Industries Co., Ltd., Nagano, JP;

Inventors:

Rie Mizutani, Nagano, JP;

Noriyoshi Shimizu, Nagano, JP;

Hiroshi Taneda, Nagano, JP;

Masaya Takizawa, Nagano, JP;

Yoshiki Akiyama, Nagano, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05K 1/11 (2006.01); H05K 1/03 (2006.01); H05K 3/46 (2006.01);
U.S. Cl.
CPC ...
H05K 1/113 (2013.01); H05K 1/0366 (2013.01); H05K 3/4644 (2013.01); H05K 2201/0212 (2013.01); H05K 2201/068 (2013.01); H05K 2201/09136 (2013.01);
Abstract

An interconnect substrate includes a core layer including a resin layer mainly composed of a non-photosensitive thermosetting resin and a through interconnect extending through the resin layer, the core layer having no reinforcement member contained therein, a first interconnect structure laminated on a first side of the core layer and including first interconnect layers and first insulating layers mainly composed of a photosensitive resin, and a second interconnect structure laminated on a second side of the core layer and including second interconnect layers and a single second insulating layer mainly composed of a photosensitive resin, wherein the first interconnect layers are electrically connected to the second interconnect layers via the through interconnect, wherein the core layer has greater rigidity than the first interconnect structure and the second interconnect structure, and wherein a thickness of the second interconnect structure is greater than a thickness of each of the first insulating layer.


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