The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2023
Filed:
Jul. 12, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
Fang-Liang Lu, New Taipei, TW;
I-Hsieh Wong, Kaohsiung, TW;
Shih-Ya Lin, Chaozhou Township, TW;
CheeWee Liu, Taipei, TW;
Samuel C. Pan, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a first layer that includes a first semiconductor material disposed on a semiconductor substrate, and a second layer of a second semiconductor material disposed on the first layer. The semiconductor substrate includes Si. The first semiconductor material and the second semiconductor material are different. The second semiconductor material is formed of an alloy including a first element and Sn. A surface region of an end portion of the second layer at both ends of the second layer has a higher concentration of Sn than an internal region of the end portion of the second layer. The surface region surrounds the internal region.