The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2023

Filed:

Nov. 22, 2021
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Hong Bok We, San Diego, CA (US);

Joan Rey Villarba Buot, Escondido, CA (US);

Michelle Yejin Kim, San Diego, CA (US);

Kuiwon Kang, San Diego, CA (US);

Aniket Patil, San Diego, CA (US);

Assignee:

QUALCOMM INCORPORATED, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/10 (2006.01); H01L 21/48 (2006.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 25/105 (2013.01); H01L 21/486 (2013.01); H01L 25/50 (2013.01); H01L 2225/107 (2013.01); H01L 2225/1023 (2013.01); H01L 2225/1041 (2013.01); H01L 2225/1058 (2013.01);
Abstract

Integrated circuit (IC) packages employing a package substrate with a double side embedded trace substrate (ETS), and related fabrication methods. To facilitate providing a reduced thickness substrate in the IC package to reduce overall height of the IC package while supporting higher density input/output (I/O) connections, a package substrate in the IC package includes a double side ETS. A double side ETS includes two (2) adjacent ETS metallization layers that both include metal traces embedded in an insulating layer. The embedded metal traces in the ETS metallization layers of the double side ETS can be electrically coupled to each other through vertical interconnect accesses (vias) (e.g., metal pillars, metal posts) to provide signal routing paths between embedded metal traces in the ETS metallization layers.


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