The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2023
Filed:
Aug. 23, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
National Yang Ming Chiao Tung University, Hsinchu, TW;
Chenming Hu, Oakland, CA (US);
Shu-Jui Chang, Hsinchu County, TW;
Chen-Han Chou, Tainan, TW;
Yen-Teng Ho, Hsinchu, TW;
Chia-Hsing Wu, New Taipei, TW;
Kai-Yu Peng, Miaoli County, TW;
Cheng-Hung Shen, New Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
NATIONAL YANG MING CHIAO TUNG UNIVERSITY, Hsinchu, TW;
Abstract
An IC structure comprises a first transistor formed on a substrate, a first interconnect structure over the first transistor, a dielectric layer over the first interconnect structure, a plurality of 2D semiconductor islands on the dielectric layer, and a plurality of second transistors formed on the plurality of 2D semiconductor islands.