The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2023
Filed:
Oct. 19, 2020
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Chih-Horng Chang, Taipei, TW;
Jie-Cheng Deng, New Taipei, TW;
Tin-Hao Kuo, Hsinchu, TW;
Ying-Yu Chen, Yilan, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/48 (2013.01); H01L 21/563 (2013.01); H01L 23/3142 (2013.01); H01L 24/97 (2013.01); H01L 21/561 (2013.01); H01L 23/3128 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/83 (2013.01); H01L 2224/13101 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/83051 (2013.01); H01L 2224/92125 (2013.01); H01L 2224/97 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/181 (2013.01); H01L 2924/18301 (2013.01); H01L 2924/351 (2013.01);
Abstract
A surface treatment and an apparatus for semiconductor packaging are provided. A surface of a conductive layer is treated to create a roughened surface. In one example, nanowires are formed on a surface of the conductive layer. In the case of a copper conductive layer, the nanowires may include a CuO layer. In another example, a complex compound is formed on a surface of the conductive layer. The complex compound may be formed using, for example, thiol and trimethyl phosphite.