The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2023
Filed:
Jun. 29, 2018
Intel Corporation, Santa Clara, CA (US);
Daniel Ouellette, Portland, OR (US);
Justin Brockman, Portland, OR (US);
Tofizur Rahman, Portland, OR (US);
Angeline Smith, Hillsboro, OR (US);
Andrew Smith, Hillsboro, OR (US);
Christopher Wiegand, Portland, OR (US);
Oleg Golonzka, Beaverton, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A memory device includes a bottom electrode, a conductive layer such as an alloy including ruthenium and tungsten above the bottom electrode and a perpendicular magnetic tunnel junction (pMTJ) on the conductive layer. In an embodiment, the pMTJ includes a fixed magnet, a tunnel barrier above the fixed magnet and a free magnet on the tunnel barrier. The memory device further includes a synthetic antiferromagnetic (SAF) structure that is ferromagnetically coupled with the fixed magnet to pin a magnetization of the fixed magnet. The conductive layer has a crystal texture which promotes high quality FCC <111> crystal texture in the SAF structure and improves perpendicular magnetic anisotropy of the fixed magnet.