The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2023
Filed:
Feb. 02, 2021
Applicants:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Tsmc Nanjing Company, Limited, Nanjing, CN;
Inventors:
Min Han Hsu, Hsinchu, TW;
Jung-Chih Tsao, Hsinchu, TW;
Assignees:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
TSMC NANJING COMPANY, LIMITED, Nanjing, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28088 (2013.01); H01L 29/4966 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01);
Abstract
The semiconductor device includes a semiconductor fin, and a gate stack over the semiconductor fin. The gate stack includes a gate dielectric layer over a channel region of the semiconductor fin, a work function material layer over the gate dielectric layer, wherein the work function material layer includes dopants, and a gate electrode layer over the work function material layer. The gate dielectric layer is free of the dopants.