The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2023
Filed:
Jun. 30, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Tsmc China Company Limited, Shanghai, CN;
Feng Han, Shanghai, CN;
Lei Shi, Shanghai, CN;
Hung-Chih Tsai, Kaohsiung County, TW;
Liang-Yu Su, Yunlin County, TW;
Hang Fan, Shanghai, CN;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
TSMC CHINA COMPANY LIMITED, Shanghai, CN;
Abstract
A method includes forming a body region of a first conductivity type and a doped region of a second conductivity type in a semiconductor substrate; forming a gate structure the substrate, and first gate spacers respectively on first and second sides of the gate structure; depositing a second spacer layer and a third spacer layer over the gate structure; patterning the third spacer layer into third gate spacers respectively on the first and second sides of the gate structure; removing a first one of the third gate spacers from the first side of the gate structure, while leaving a second one of the third gate spacers on the second side of the gate structure; and patterning the second spacer layer into a second gate spacer by using the second one of the third gate spacers as an etching mask.