The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2023
Filed:
Jan. 18, 2021
Kla Corporation, Milpitas, CA (US);
David W. Price, Austin, TX (US);
Robert J. Rathert, Mechanicsville, VA (US);
Chet V. Lenox, Lexington, TX (US);
Robert Cappel, Pleasanton, CA (US);
Oreste Donzella, San Ramon, CA (US);
Kara L. Sherman, San Jose, CA (US);
KLA Corporation, Milpitas, CA (US);
Abstract
A system and method for identifying latent reliability defects (LRD) in semiconductor devices are configured to perform one or more stress tests with one or more stress test tools on at least some of a plurality of wafers received from one or more in-line sample analysis tools to determine a passing set of the plurality of wafers and a failing set of the plurality of wafers, perform a reliability hit-back analysis on at least some of the failing set of the plurality of wafers, analyze the reliability hit-back analysis to determine one or more geographic locations of one or more die fail chains caused by one or more latent reliability defects (LRD), and perform a geographic hit-back analysis on the one or more geographic locations of the one or more die fail chains caused by the LRD.