The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2023
Filed:
Jul. 11, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/062 (2012.01); H01L 31/113 (2006.01); H01L 23/532 (2006.01); H01L 23/535 (2006.01); H01L 21/768 (2006.01); H01L 21/285 (2006.01); H01L 23/485 (2006.01); H01L 29/417 (2006.01); H01L 21/8238 (2006.01); H01L 21/84 (2006.01); H01L 27/092 (2006.01); H01L 27/12 (2006.01); H01L 29/78 (2006.01); H01L 21/3065 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53209 (2013.01); H01L 21/28518 (2013.01); H01L 21/3065 (2013.01); H01L 21/76802 (2013.01); H01L 21/76805 (2013.01); H01L 21/76814 (2013.01); H01L 21/76843 (2013.01); H01L 21/76846 (2013.01); H01L 21/76855 (2013.01); H01L 21/76877 (2013.01); H01L 21/76886 (2013.01); H01L 21/76889 (2013.01); H01L 21/76895 (2013.01); H01L 21/76897 (2013.01); H01L 21/823821 (2013.01); H01L 21/845 (2013.01); H01L 23/485 (2013.01); H01L 23/528 (2013.01); H01L 23/535 (2013.01); H01L 23/53266 (2013.01); H01L 27/0924 (2013.01); H01L 27/1211 (2013.01); H01L 29/41791 (2013.01); H01L 29/7848 (2013.01);
Abstract
A semiconductor device includes a semiconductor substrate, a contact region present in the semiconductor substrate, and a silicide present on a textured surface of the contact region. A plurality of sputter ions is present between the silicide and the contact region. Since the surface of the contact region is textured, the contact area provided by the silicide is increased accordingly, thus the resistance of an interconnection structure in the semiconductor device is reduced.