The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 05, 2023

Filed:

Oct. 29, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sonkwan Hwang, Suwon-si, KR;

Taeseong Kim, Suwon-si, KR;

Hoonjoo Na, Seoul, KR;

Kwangjin Moon, Hwaseong-si, KR;

Hyungjun Jeon, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 23/48 (2006.01); H01L 27/088 (2006.01); H01L 25/065 (2023.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/76898 (2013.01); H01L 23/528 (2013.01); H01L 25/0657 (2013.01); H01L 27/0886 (2013.01); H01L 24/02 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 2224/02381 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/05569 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/06181 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06544 (2013.01);
Abstract

A semiconductor device including a semiconductor substrate, an integrated circuit layer on the semiconductor substrate, first to nmetal wiring layers (where n is a positive integer) sequentially stacked on the semiconductor substrate and the integrated circuit layer, a first through via structure extending in a vertical direction toward the semiconductor substrate from a first via connection metal wiring layer, which is one of the second to nmetal wiring layers other than the first metal wiring layer, and passing through the semiconductor substrate, and a second through via structure being apart from the first through via structure, extending in a vertical direction toward the semiconductor substrate from a second via connection metal wiring layer, which is one of the second to nmetal wiring layers other than the first metal wiring layer, and passing through the semiconductor substrate may be provided.


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