The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 05, 2023

Filed:

May. 04, 2021
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Hao Jiang, San Jose, CA (US);

Chi Lu, Cupertino, CA (US);

He Ren, San Jose, CA (US);

Mehul Naik, San Jose, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3213 (2006.01); H01L 21/033 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32136 (2013.01); H01J 37/32449 (2013.01); H01L 21/0332 (2013.01); H01L 21/32139 (2013.01); H01L 21/67069 (2013.01); H01J 37/32183 (2013.01); H01J 2237/3341 (2013.01); H01L 23/53242 (2013.01);
Abstract

Methods and apparatus for processing a substrate are provided. For example, a method of processing a substrate comprises supplying oxygen (O) into a processing volume of an etch chamber to react with a silicon-based hardmask layer atop a base layer of ruthenium to form a covering of an SiO-like material over the silicon-based hardmask layer and etching the base layer of ruthenium using at least one of Oor chloride (Cl) while supplying nitrogen (N) to sputter some of the SiO-like material onto an exposed ruthenium sidewall created during etching.


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