The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2023
Filed:
May. 19, 2021
Micron Technology, Inc., Boise, ID (US);
Tomoko Ogura Iwasaki, San Jose, CA (US);
Kulachet Tanpairoj, Santa Clara, CA (US);
Jianmin Huang, San Carlos, CA (US);
Lawrence Celso Miranda, San Jose, CA (US);
Sheyang Ning, San Jose, CA (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Described are systems and methods for performing memory programming operations in the overwrite mode. An example memory device includes: a memory array comprising a plurality of memory cells electrically coupled to a plurality of wordlines and a plurality of bitlines; and a controller coupled to the memory array, the controller to perform operations comprising: responsive to identifying a first data item to be stored by a portion of the memory array, causing a first memory programming operation to be performed to program, to a first target threshold voltage, a set of memory cells included by the portion of the memory array; and responsive to identifying a second data item to be stored by the portion of the memory array, causing a second memory programming operation to be performed to program the set of memory cells to a second target threshold voltage exceeding the first target threshold voltage.