The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 05, 2023

Filed:

Dec. 28, 2018
Applicant:

Novellus Systems, Inc., Fremont, CA (US);

Inventors:

Pramod Subramonium, Beaverton, OR (US);

Joseph L. Womack, Tigard, OR (US);

Dong Niu, West Linn, OR (US);

Keith Fox, Tigard, OR (US);

Assignee:

Novellus Systems, Inc., Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/50 (2006.01); H01J 37/32 (2006.01); C23C 16/24 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); C23C 16/509 (2006.01); C23C 16/54 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01); C23C 16/52 (2006.01);
U.S. Cl.
CPC ...
C23C 16/50 (2013.01); C23C 16/24 (2013.01); C23C 16/345 (2013.01); C23C 16/402 (2013.01); C23C 16/4401 (2013.01); C23C 16/45512 (2013.01); C23C 16/45523 (2013.01); C23C 16/45565 (2013.01); C23C 16/45574 (2013.01); C23C 16/509 (2013.01); C23C 16/52 (2013.01); C23C 16/54 (2013.01); H01J 37/32137 (2013.01); H01J 37/32155 (2013.01); H01L 21/022 (2013.01); H01L 21/02123 (2013.01); H01L 21/02164 (2013.01); H01L 21/02274 (2013.01); H01L 21/6719 (2013.01); H01L 21/67201 (2013.01); H01L 21/67207 (2013.01);
Abstract

An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, an apparatus configured to deposit a plurality of film layers having different compositions on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a process station reactant feed fluidically coupled to a gas inlet of the process station, and fluidically coupled to an inert gas delivery line, a first reactant mixture gas delivery line and a second reactant mixture gas delivery line such that the first reactant gas mixture and the second reactant gas mixture can be introduced sequentially into the process station reactant feed, and supplied via a shared path to the process station.


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