The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2023
Filed:
Jun. 07, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Hsiu-Wen Hsueh, Taichung, TW;
Chii-Ping Chen, Hsinchu, TW;
Neng-Jye Yang, Hsinchu, TW;
Ya-Lien Lee, Baoshan Township, TW;
An-Jiao Fu, Taipei, TW;
Ya-Ching Tseng, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Some embodiments relate to a semiconductor structure including a method for forming a semiconductor structure. The method includes forming a lower conductive structure within a first dielectric layer over a substrate. An upper dielectric structure is formed over the lower conductive structure. The upper dielectric structure comprises sidewalls defining an opening over the lower conductive structure. A first liner layer is selectively deposited along the sidewalls of the upper dielectric structure. A conductive body is formed within the opening and over the lower conductive structure. The conductive body has a bottom surface directly overlying a middle region of the lower conductive structure. The first layer is laterally offset from the middle region of the lower conductive structure by a non-zero distance.