The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2023
Filed:
Sep. 29, 2020
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Jung-Chan Yang, Taoyuan County, TW;
Hui-Zhong Zhuang, Kaohsiung, TW;
Chih-Liang Chen, Hsinchu, TW;
Ting-Wei Chiang, New Taipei, TW;
Cheng-I Huang, Hsinchu, TW;
Kuo-Nan Yang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A semiconductor device, including: a first OD strip, a first doping region, a second OD strip, a second doping region, and a third doping region. The first OD strip extending in a first direction is disposed on the first OD strip, and includes a first-type dopant to define an active region of a first MOS. The second OD strip extending in the first direction and immediately adjacent to the first OD strip in a second direction, wherein the second direction is orthogonal with the first direction. The second doping region is disposed on the second OD strip, and includes a second-type dopant to define an active region of a second MOS. The third doping region is disposed on the second OD strip, and includes the second-type dopant and is configured to be a body terminal of the first MOS.