The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2023
Filed:
Mar. 24, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chung-Chiang Wu, Taichung, TW;
Shih-Hang Chiu, Taichung, TW;
Chih-Chang Hung, Hsinchu, TW;
I-Wei Yang, Yilan County, TW;
Shu-Yuan Ku, Zhubei, TW;
Cheng-Lung Hung, Hsinchu, TW;
Da-Yuan Lee, Jhubei, TW;
Ching-Hwanq Su, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method includes forming a first semiconductor fin in a substrate, forming a metal gate structure over the first semiconductor fin, removing a portion of the metal gate structure to form a first recess in the metal gate structure that is laterally separated from the first semiconductor fin by a first distance, wherein the first distance is determined according to a first desired threshold voltage associated with the first semiconductor fin, and filling the recess with a dielectric material.