The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2023

Filed:

Jan. 31, 2020
Applicant:

Mediatek Inc., Hsin-Chu, TW;

Inventors:

Tzu-Hung Lin, Hsin-Chu, TW;

I-Hsuan Peng, Hsinchu, TW;

Nai-Wei Liu, Hsin-Chu, TW;

Wei-Che Huang, Zhudong Township, Hsinchu County, TW;

Che-Ya Chou, Kaohsiung, TW;

Assignee:

MediaTek Inc., Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/552 (2006.01); H01L 23/66 (2006.01); H01L 23/538 (2006.01); H01L 25/16 (2023.01); H01L 23/00 (2006.01); H01L 25/10 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 23/66 (2013.01); H01L 23/5383 (2013.01); H01L 23/5384 (2013.01); H01L 23/5385 (2013.01); H01L 23/5389 (2013.01); H01L 23/552 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 25/16 (2013.01); H01L 23/49816 (2013.01); H01L 25/105 (2013.01); H01L 2223/6677 (2013.01); H01L 2224/02379 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73267 (2013.01); H01L 2225/1035 (2013.01); H01L 2225/1041 (2013.01); H01L 2225/1058 (2013.01); H01L 2924/1421 (2013.01); H01L 2924/1435 (2013.01); H01L 2924/1438 (2013.01); H01L 2924/19011 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/19042 (2013.01); H01L 2924/19043 (2013.01); H01L 2924/3025 (2013.01);
Abstract

The invention provides a semiconductor package assembly. The semiconductor package assembly includes a first semiconductor package including a first redistribution layer (RDL) structure having a first surface and a second surface opposite to the first substrate. The first RDL structure includes a plurality of first conductive traces close to the first surface of the first RDL structure. An antenna pattern is disposed close to the second surface of the first RDL structure. A first semiconductor die is disposed on the first surface of the first RDL structure and electrically coupled to the first RDL structure. A plurality of conductive structures is disposed on the first surface of the first RDL structure and electrically coupled to the first RDL structure. The plurality of conductive structures is spaced apart from the antenna pattern through the plurality of first conductive traces of the first RDL structure.


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