The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2023

Filed:

Jan. 12, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Ru-Ying Huang, Taipei, TW;

Yung-Ching Chen, Dali, TW;

Yueh-Chiou Lin, Taichung County, TW;

Yian-Liang Kuo, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 27/146 (2006.01); H01L 23/538 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 21/822 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5386 (2013.01); H01L 21/76898 (2013.01); H01L 21/8221 (2013.01); H01L 23/481 (2013.01); H01L 23/5383 (2013.01); H01L 24/09 (2013.01); H01L 24/17 (2013.01); H01L 24/49 (2013.01); H01L 24/73 (2013.01); H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14634 (2013.01); H01L 27/14636 (2013.01); H01L 2224/73207 (2013.01); H01L 2924/3511 (2013.01); H01L 2924/35121 (2013.01);
Abstract

Various embodiments of the present application are directed towards a pad with high strength and bondability. In some embodiments, an integrated chip comprises a substrate, an interconnect structure, a pad, and a conductive structure. The interconnect structure adjoins the substrate and comprises wires and vias. The wires and the vias are stacked between the pad and the substrate. The conductive structure (e.g., a wire bond) extends through the substrate to the pad. By arranging the wires and the vias between the pad and the substrate, the pad may be inset into a passivation layer of the interconnect structure and the passivation layer may absorb stress on the pad. Further, the pad may contact the wires and the vias at a top wire level. A thickness of the top wire level may exceed a thickness of other wire levels, whereby the top wire level may be more tolerant to stress.


Find Patent Forward Citations

Loading…