The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2023

Filed:

Jan. 25, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Ta-Chun Lin, Hsinchu, TW;

Tien-Shao Chuang, Hsinchu, TW;

Kuang-Cheng Tai, Hsinchu, TW;

Chun-Hung Chen, Hsinchu, TW;

Chih-Hung Hsieh, Hsin-Chu, TW;

Kuo-Hua Pan, Hsinchu, TW;

Jhon-Jhy Liaw, Hsinchu Couny, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/762 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76232 (2013.01); H01L 21/76224 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 21/823821 (2013.01); H01L 21/823878 (2013.01); H01L 21/823892 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 27/0928 (2013.01); H01L 29/0649 (2013.01); H01L 29/6653 (2013.01); H01L 29/66545 (2013.01); H01L 29/7851 (2013.01);
Abstract

A semiconductor device structure is provided. The semiconductor device structure includes a first fin structure and an adjacent second fin structure protruding from the semiconductor substrate and an isolation structure formed in the semiconductor substrate and in direct contact with the first fin structure and the second fin structure. The first fin structure and the second fin structure each include a first portion protruding above a top surface of the isolation structure, a second portion in direct contact with a bottom surface of the first portion, and a third portion extending from a bottom of the second portion. A top width of the third portion is different than a bottom width of the third portion and a bottom width of the second portion.


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