The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 08, 2023

Filed:

Jun. 25, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Hsia-Wei Chen, Taipei, TW;

Chih-Hung Pan, Taichung, TW;

Chih-Hsiang Chang, Taichung, TW;

Yu-Wen Liao, New Taipei, TW;

Wen-Ting Chu, Kaohsiung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); H10B 63/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10N 70/8416 (2023.02); H10N 70/023 (2023.02); H10B 63/30 (2023.02); H10B 63/80 (2023.02); H10N 70/063 (2023.02); H10N 70/24 (2023.02); H10N 70/826 (2023.02);
Abstract

A method for fabricating a memory device is provided. The method includes forming a bottom electrode layer over a substrate; forming a buffer layer over the bottom electrode layer; performing a surface treatment to a top surface of the buffer layer; depositing a resistance switch layer over the top surface of the buffer layer after performing the surface treatment; forming a top electrode over the resistance switch layer; and patterning the resistance switch layer into a resistance switch element below the top electrode.


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