The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2023
Filed:
Apr. 15, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Wei-Hao Liao, Taichung, TW;
Hsi-Wen Tien, Xinfeng Township, Hsinchu County, TW;
Chih-Wei Lu, Hsinchu, TW;
Pin-Ren Dai, New Taipei, TW;
Chung-Ju Lee, Hsinchu, TW;
Taiwan Semiconductor Manufacuturing Company, Ltd., Hsinchu, TW;
Abstract
An MRAM device includes a bottom electrode over a substrate, a magnetic tunnel junction (MTJ) structure on the bottom electrode, and a top electrode on the MTJ structure. The MRAM device also includes spacers on sidewalls of the top electrode and the MTJ structure, and a first dielectric layer surrounding the spacers. The MRAM device further includes a patterned etch stop layer on the first dielectric layer and the spacers. In addition, the MRAM device includes a second dielectric layer on the patterned etch stop layer, and a top electrode via embedded in the second dielectric layer and in contact with the top electrode and the patterned etch stop layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile