The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2023
Filed:
Mar. 05, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Geng-Cing Lin, Hsinchu, TW;
Ze-Sian Lu, Hsinchu, TW;
Meng-Sheng Chang, Hsinchu, TW;
Chia-En Huang, Hsinchu, TW;
Jung-Ping Yang, Hsinchu, TW;
Yen-Huei Chen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
An integrated circuit read only memory (ROM) structure includes a first ROM transistor with a first gate electrode, a first source, and a first drain, and a second ROM transistor with a second gate electrode, a second source, and a second drain. A drain conductive line is over the first drain and the second drain, and is between the first drain and the second drain. The first drain, the drain conductive line and the second drain are between the first gate electrode and the second gate electrode, and a first trench isolation structure electrically isolates the first drain from the first source is below the first gate electrode.