The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2023
Filed:
Oct. 20, 2020
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Vibhor Jain, Williston, VT (US);
Anthony K. Stamper, Burlington, VT (US);
John J. Ellis-Monaghan, Grand Isle, VT (US);
Steven M. Shank, Jericho, VT (US);
Rajendran Krishnasamy, Essex Junction, VT (US);
GLOBALFOUNDRIES U.S. INC., Malta, NY (US);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to heterojunction bipolar transistors (HBTs) with a buried trap rich region and methods of manufacture. The structure includes: a trap rich isolation region embedded within the bulk substrate; and a heterojunction bipolar transistor above the trap rich isolation region, with its sub-collector region separated by the trap rich isolation region by a layer of the bulk substrate.