The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2023
Filed:
Nov. 30, 2020
Applicant:
Ihi Corporation, Tokyo, JP;
Inventors:
Yuuta Ootsuka, Tokyo, JP;
Yasutomo Tanaka, Tokyo, JP;
Hisato Inoue, Tokyo, JP;
Wataru Kubota, Tokyo, JP;
Masato Ishizaki, Tokyo, JP;
Yasuyuki Fukushima, Tokyo, JP;
Izumi Matsukura, Tokyo, JP;
Assignee:
IHI Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C04B 35/628 (2006.01); C04B 35/80 (2006.01); C23C 16/04 (2006.01); C23C 16/32 (2006.01); D06M 11/77 (2006.01);
U.S. Cl.
CPC ...
C04B 35/62863 (2013.01); C04B 35/62884 (2013.01); C04B 35/80 (2013.01); C23C 16/045 (2013.01); C23C 16/325 (2013.01); D06M 11/77 (2013.01); C04B 2235/3826 (2013.01); C04B 2235/5244 (2013.01); C04B 2235/614 (2013.01);
Abstract
A production method for a composite material, which includes a porous substrate and a silicon carbide film formed on a surface of a material forming the porous substrate, includes causing a silicon source containing a silicon atom, a chlorine source containing a chlorine atom, and a carbon source containing a carbon atom to react with each other to form the silicon carbide film on the surface of the material forming the porous substrate.