The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2023
Filed:
Mar. 22, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Tien-Lu Lin, Hsinchu, TW;
Che-Chen Wu, Hsinchu, TW;
Chia-Lin Chuang, Taoyuan, TW;
Yu-Ming Lin, Hsinchu, TW;
Chia-Hao Chang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a pair of source/drain features formed in a semiconductor substrate and a gate stack formed over a portion of the semiconductor substrate that is between the pair of source/drain features. The semiconductor device structure also includes gate spacers extend along opposing sidewalls of the gate stack and protrude above an upper surface of the gate stack. Additionally, the semiconductor device structure includes a first capping layer formed over the gate stack and spaced apart from the upper surface of the gate stack by a gap. Opposing sidewalls of the first capping layer are covered by portions of the gate spacers that protrude above the upper surface of the gate stack.