The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2023

Filed:

Aug. 30, 2021
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Tzu-Wei Chiu, Hsinchu, TW;

Sao-Ling Chiu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01); H01L 23/532 (2006.01); H01L 21/60 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49822 (2013.01); H01L 21/486 (2013.01); H01L 21/4846 (2013.01); H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/568 (2013.01); H01L 21/6835 (2013.01); H01L 23/49805 (2013.01); H01L 23/49811 (2013.01); H01L 23/49827 (2013.01); H01L 24/19 (2013.01); H01L 23/49816 (2013.01); H01L 23/53228 (2013.01); H01L 23/53233 (2013.01); H01L 2021/6006 (2013.01); H01L 2221/68372 (2013.01); H01L 2221/68381 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/18 (2013.01); H01L 2924/18162 (2013.01);
Abstract

A method comprises embedding a semiconductor structure in a molding compound layer, depositing a plurality of photo-sensitive material layers over the molding compound layer, developing the plurality of photo-sensitive material layers to form a plurality of openings, wherein a first portion and a second portion of an opening of the plurality of openings are formed in different photo-sensitive material layers and filling the first portion and the second portion of the opening with a conductive material to form a first via in the first portion and a first redistribution layer in the second portion.


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