The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2023
Filed:
Dec. 11, 2020
Applicant:
Nxp Usa, Inc., Austin, TX (US);
Inventors:
Michael B. Vincent, Chandler, AZ (US);
Vivek Gupta, Phoenix, AZ (US);
Richard Te Gan, Chandler, AZ (US);
Kabir Mirpuri, Scottsdale, AZ (US);
Assignee:
NXP USA, INC., Austin, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/66 (2006.01); H01L 23/31 (2006.01); H01L 23/538 (2006.01); H01L 23/00 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01Q 1/38 (2006.01);
U.S. Cl.
CPC ...
H01L 23/66 (2013.01); H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/565 (2013.01); H01L 23/3121 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 23/5389 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01Q 1/38 (2013.01); H01L 2223/6622 (2013.01); H01L 2223/6677 (2013.01); H01L 2224/214 (2013.01);
Abstract
A semiconductor device having an integrated antenna is provided. The semiconductor device includes a base die having an integrated circuit formed at an active surface and a cap die bonded to the backside surface of the base die. A metal trace is formed over a top surface of the cap die. A cavity is formed under the metal trace. A conductive via is formed through the base die and the cap die interconnecting the metal trace and a conductive trace of the integrated circuit.