The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 2023

Filed:

Jul. 26, 2021
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

Vincent J. McGahay, Poughkeepsie, NY (US);

Craig R. Gruszecki, Poughquag, NY (US);

Ju Jin An, Fishkill, NY (US);

Tim H. Lee, Fishkill, NY (US);

Todd J. Van Kleeck, Kerhonkson, NY (US);

Assignee:

GlobalFoundries U.S. Inc., Malta, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 29/06 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 21/7682 (2013.01); H01L 23/5222 (2013.01); H01L 29/0649 (2013.01);
Abstract

Embodiments of the disclosure provide a method to form an air gap structure. An opening is formed in a first dielectric layer between adjacent conductors. A first dielectric layer is formed over the opening to fill a first portion of the opening. A remainder of the opening is free of the first dielectric layer. A second dielectric layer is formed on a top surface of the first dielectric layer, with a remainder of the opening unfilled. The second dielectric layer is devoid of wiring. The remainder of the opening below the second dielectric layer defines an air gap structure. A wiring layer is formed above the air gap structure.


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