The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 2023

Filed:

Oct. 24, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chih-Tsung Shih, Hsinchu, TW;

Chen-Ming Wang, Kaohsiung, TW;

Yahru Cheng, Taipei, TW;

Bo-Tsun Liu, Taipei, TW;

Tsung Chuan Lee, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/11 (2006.01); G03F 7/20 (2006.01); G03F 7/16 (2006.01); G03F 7/38 (2006.01);
U.S. Cl.
CPC ...
G03F 7/11 (2013.01); G03F 7/168 (2013.01); G03F 7/2004 (2013.01); G03F 7/38 (2013.01);
Abstract

A method of generating a layout pattern includes disposing a photoresist layer of a resist material on a substrate and disposing a top layer over of the photoresist layer. The top layer is transparent for extreme ultraviolet (EUV) radiation and the top layer is opaque for deep ultraviolet (DUV) radiation. The method further includes irradiating the photoresist layer with radiation generated from an EUV radiation source. The radiation passes through the top layer to expose the photoresist layer.


Find Patent Forward Citations

Shih, Chih-Tsung. (2023). Method of reducing undesired light influence in extreme ultraviolet exposure (U.S. Patent No. 11703762). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11703762

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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