The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 04, 2023

Filed:

May. 09, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Meng-Sheng Chang, Hsinchu, TW;

Chien-Ying Chen, Hsinchu, TW;

Chia-En Huang, Hsinchu, TW;

Yih Wang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 20/20 (2023.01); G06F 30/392 (2020.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H10B 20/20 (2023.02); G06F 30/392 (2020.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01);
Abstract

An IC device includes first through third device pairs positioned in first through third active areas extending in a first direction, each pair including first and second transistors coupled between respective first and second anti-fuse structures and a shared bit line contact, and each of the first and third active areas being adjacent to the second active area. First through fourth conductive lines extend in a second direction, first and second conductive paths couple the first conductive line to the first anti-fuse structures, a third conductive path couples the fourth conductive line to the second anti-fuse structures, and a fourth conductive path couples the third conductive line to the second transistors. The first and third conductive paths are aligned along the first direction between the first and second active areas, and the second and fourth conductive paths are aligned along the first direction between the second and third active areas.


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