The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2023
Filed:
Jan. 12, 2021
Applicant:
Win Semiconductors Corp., Taoyuan, TW;
Inventors:
Ju-Hsien Lin, Taoyuan, TW;
Jung-Tao Chung, Taoyuan, TW;
Shu-Hsiao Tsai, Taoyuan, TW;
Hsi-Tsung Lin, Taoyuan, TW;
Chen-An Hsieh, Taoyuan, TW;
Yi-Han Chen, Taoyuan, TW;
Yao-Ting Shao, Taoyuan, TW;
Assignee:
WIN SEMICONDUCTORS CORP., Taoyuan, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 27/06 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 27/0635 (2013.01); H01L 29/41775 (2013.01);
Abstract
A semiconductor structure includes a substrate, a passive device and an active device over the substrate. The active device is formed in the first region of the substrate, and the passive device is formed in the second region of the substrate. The semiconductor structure further includes a passivation layer that covers the top surface of the passive device. The passivation layer has an opening that exposes the active device.