The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2023
Filed:
Dec. 18, 2017
Lam Research Corporation, Fremont, CA (US);
Dengliang Yang, Union City, CA (US);
Haoquan Fang, Sunnyvale, CA (US);
David Cheung, Foster City, CA (US);
Gnanamani Amburose, Fremont, CA (US);
Eunsuk Ko, San Jose, CA (US);
Weiyi Luo, Fremont, CA (US);
Dan Zhang, Fremont, CA (US);
LAM RESEARCH CORPORATION, Fremont, CA (US);
Abstract
A substrate processing system for selectively etching a substrate includes a first chamber and a second chamber. A first gas delivery system supplies an inert gas species to the first chamber. A plasma generating system generates plasma including ions and metastable species in the first chamber. A gas distribution device removes the ions from the plasma, blocks ultraviolet (UV) light generated by the plasma and delivers the metastable species to the second chamber. A substrate support is arranged below the gas distribution device to support the substrate. A second gas delivery system delivers a reactive gas species to one of the gas distribution device or a volume located below the gas distribution device. The metastable species transfer energy to the reactive gas species to selectively etch one exposed material of the substrate more than at least one other exposed material of the substrate.