The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 04, 2023

Filed:

May. 17, 2022
Applicant:

Tel Manufacturing and Engineering of America, Inc., Chaska, MN (US);

Inventors:

Kazuya Dobashi, Hillsboro, OR (US);

Hiromitsu Kambara, Miyagi, JP;

Masaru Nishino, Hillsboro, OR (US);

Reo Kosaka, Miyagi, JP;

Matthew Gwinn, Billerica, MA (US);

Luis Fernandez, Billerica, MA (US);

Kenichi Oyama, Yamanashi, JP;

Sakurako Natori, Yamanashi, JP;

Noriaki Okabe, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/20 (2006.01); H01J 37/317 (2006.01); C23C 14/46 (2006.01); C23C 14/50 (2006.01); H01L 21/68 (2006.01);
U.S. Cl.
CPC ...
H01J 37/20 (2013.01); C23C 14/46 (2013.01); C23C 14/505 (2013.01); H01J 37/317 (2013.01); H01L 21/68 (2013.01); H01J 2237/20228 (2013.01);
Abstract

A method of processing a substrate includes loading the substrate on a substrate holder. The substrate includes a major surface and a feature disposed over the major surface. The feature has a first width along an etch direction. The method includes exposing portions of the major surface and changing the first width of the feature to a second width along the etch direction by etching a first portion of the sidewalls of the feature with a gas cluster ion beam oriented along a beam direction.


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