The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 04, 2023

Filed:

Aug. 25, 2021
Applicant:

Bruker Nano, Inc., Santa Barbara, CA (US);

Inventors:

Joseph S. Fragala, Camarillo, CA (US);

Xing Zhao, Camarillo, CA (US);

Assignee:

Bruker Nano, Inc., Santa Barbara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 5/18 (2006.01); H01J 9/24 (2006.01); H01J 9/233 (2006.01); H01J 35/18 (2006.01);
U.S. Cl.
CPC ...
H01J 9/233 (2013.01); H01J 5/18 (2013.01); H01J 9/24 (2013.01); H01J 35/18 (2013.01); H01J 2235/18 (2013.01);
Abstract

A method for producing a radiation window includes patterning a photo resist structure onto a double-sided silicon wafer, plasma etching the silicon wafer to create an etched silicon wafer having a silicon supporting structure etched upon a first side of the double-sided silicon wafer, applying a silicon nitride thin film to the etched silicon wafer, patterning a photo resist structure and plasma etching a second side of the double-sided silicon wafer to create an initial window in the silicon nitride thin film, and wet etching the second side of the double-sided silicon wafer to release the silicon nitride thin film and supporting structure from the portion of the double-sided silicon wafer defined by the initial window.


Find Patent Forward Citations

Loading…