The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 20, 2023

Filed:

Nov. 24, 2020
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Tai-Yen Peng, Hsinchu, TW;

Yu-Shu Chen, Hsinchu, TW;

Chien Chung Huang, Taichung, TW;

Sin-Yi Yang, Taichung, TW;

Chen-Jung Wang, Hsinchu, TW;

Han-Ting Lin, Hsinchu, TW;

Jyu-Horng Shieh, Hsin-Chu, TW;

Qiang Fu, Hsinchu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/80 (2023.01); H10N 50/01 (2023.01); H10N 50/85 (2023.01); H01L 43/02 (2006.01); H01L 43/12 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract

The present disclosure provides a method for manufacturing semiconductor structure, including forming an insulation layer, forming a first via trench in the insulation layer, forming a barrier layer in the first via trench, forming a bottom electrode via in the first via trench, forming a magnetic tunneling junction (MTJ) layer above the bottom electrode via, and performing an ion beam etching operation, including patterning the MTJ layer to form an MTJ and removing a portion of the insulation layer from a top surface.


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