The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2023
Filed:
Apr. 02, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Tai-Yen Peng, Hsinchu, TW;
Hui-Hsien Wei, Taoyuan, TW;
Wei-Chih Wen, Hsinchu County, TW;
Pin-Ren Dai, Hsinchu County, TW;
Chien-Min Lee, Hsinchu County, TW;
Sheng-Chih Lai, Hsinchu County, TW;
Han-Ting Tsai, Kaohsiung, TW;
Chung-Te Lin, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A device includes a conductive feature, a dielectric layer, a bottom electrode via, and a liner layer. The dielectric layer is over the conductive feature. The bottom electrode via is in the dielectric layer and over the conductive feature. A topmost surface of the bottom electrode via is substantially flat. A liner layer cups an underside of the bottom electrode via. The liner layer has a topmost end substantially level with the topmost surface of the bottom electrode via.