The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2023
Filed:
Jun. 25, 2021
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 23/535 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 21/285 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 27/092 (2006.01); H01L 29/786 (2006.01); H01L 21/8238 (2006.01); H01L 29/08 (2006.01); H01L 29/45 (2006.01); H01L 23/485 (2006.01);
U.S. Cl.
CPC ...
H01L 23/535 (2013.01); H01L 21/28518 (2013.01); H01L 21/76805 (2013.01); H01L 21/76889 (2013.01); H01L 21/76895 (2013.01); H01L 21/823821 (2013.01); H01L 23/53266 (2013.01); H01L 27/0924 (2013.01); H01L 29/0847 (2013.01); H01L 29/41733 (2013.01); H01L 29/66772 (2013.01); H01L 29/66795 (2013.01); H01L 29/78696 (2013.01); H01L 21/76843 (2013.01); H01L 21/76855 (2013.01); H01L 23/485 (2013.01); H01L 29/458 (2013.01); H01L 29/66545 (2013.01);
Abstract
A semiconductor device includes a semiconductor substrate comprising a contact region, a silicide present on the contact region, a dielectric layer present on the semiconductor substrate, the dielectric layer comprising an opening to expose a portion of the contact region, a conductor present in the opening, a barrier layer present between the conductor and the dielectric layer, and a metal layer present between the barrier layer and the dielectric layer, wherein a Si concentration of the silicide is varied along a height of the silicide.