The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2023
Filed:
Aug. 02, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Yi-Hsiung Lin, Hsinchu County, TW;
Yi-Hsun Chiu, Hsinchu County, TW;
Shang-Wen Chang, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor structure includes a first semiconductor fin and a second semiconductor fin adjacent to the first semiconductor fin, a first epitaxial source/drain (S/D) feature disposed over the first semiconductor fin, a second epitaxial S/D feature disposed over the second semiconductor fin, an interlayer dielectric (ILD) layer disposed over the first and the second epitaxial S/D features, and an S/D contact disposed over and contacting the first epitaxial S/D feature, where a portion of the S/D contact laterally extends over the second epitaxial S/D feature, and the portion is separated from the second epitaxial S/D feature by the ILD layer.