The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 13, 2023

Filed:

May. 14, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Yi-Huan Chen, Hsinchu, TW;

Chien-Chih Chou, New Taipei, TW;

Szu-Hsien Liu, Hsinchu County, TW;

Kong-Beng Thei, Hsinchu County, TW;

Huan-Chih Yuan, Zhubei, TW;

Jhu-Min Song, Nantou County, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 29/0649 (2013.01); H01L 29/4236 (2013.01); H01L 29/66734 (2013.01);
Abstract

A semiconductor structure and a method for forming a semiconductor structure are provided. The semiconductor structure includes a substrate; a gate electrode disposed within the substrate; a gate dielectric layer disposed within the substrate and surrounding the gate electrode; a plurality of first protection structures disposed over the gate electrode; a second protection structure disposed over the gate dielectric layer; and a pair of source/drain regions on opposing sides of the gate dielectric layer.


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