The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 13, 2023

Filed:

Sep. 15, 2011
Applicants:

Rikimaru Sakamoto, Toyama, JP;

Bangching Ho, Toyama, JP;

Takafumi Endo, Toyama, JP;

Inventors:

Rikimaru Sakamoto, Toyama, JP;

Bangching Ho, Toyama, JP;

Takafumi Endo, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/11 (2006.01); C08L 61/06 (2006.01); C08G 8/08 (2006.01); C09D 161/06 (2006.01); G03F 7/09 (2006.01); C08G 8/24 (2006.01); C09D 5/00 (2006.01); C08F 12/24 (2006.01); C08F 212/14 (2006.01);
U.S. Cl.
CPC ...
G03F 7/11 (2013.01); C08G 8/08 (2013.01); C08G 8/24 (2013.01); C08L 61/06 (2013.01); C09D 5/00 (2013.01); C09D 161/06 (2013.01); G03F 7/091 (2013.01); C08F 12/24 (2013.01); C08F 212/24 (2020.02);
Abstract

There is provided a composition for forming an EUV resist overlayer film that is used in an EUV lithography process, that does not intermix with the EUV resist, that blocks unfavorable exposure light for EUV exposure, for example, UV light and DUV light and selectively transmits EUV light alone, and that can be developed with a developer after exposure. A composition for forming an EUV resist overlayer film used in an EUV lithography process including a resin containing a naphthalene ring in a main chain or in a side chain and a solvent, in which the resin may include a hydroxy group, a carboxy group, a sulfo group, or a monovalent organic group having at least one of these groups as a hydrophilic group.


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