The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2023
Filed:
Jun. 21, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Hsin-Che Chiang, Taipei, TW;
Ju-Yuan Tzeng, New Taipei, TW;
Chun-Sheng Liang, Changhua County, TW;
Chih-Yang Yeh, Hsinchu County, TW;
Shu-Hui Wang, Hsinchu, TW;
Jeng-Ya David Yeh, New Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a substrate comprising a semiconductor fin, a gate structure over the semiconductor fin, and source/drain structures over the semiconductor fin and on opposite sides of the gate structure. The gate stack comprises a high-k dielectric layer; a first work function metal layer over the high-k dielectric layer; an oxide of the first work function metal layer over the first work function metal layer; and a second work function metal layer over the oxide of the first work function metal layer, in which the first and second work function metal layers have different compositions; and a gate electrode over the second work function metal layer.