The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2023
Filed:
Mar. 31, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Hsiu-Wen Hsueh, Taichung, TW;
Yu-Hsiang Chen, Hsinchu, TW;
Wen-Sheh Huang, Hsinchu, TW;
Chii-Ping Chen, Hsinchu, TW;
Wan-Te Chen, New Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate, a first resistive element and a second resistive element over the semiconductor substrate. A topmost surface of the second resistive element is higher than a topmost surface of the first resistive element. The semiconductor device structure also includes a first conductive feature and a second conductive feature electrically connected to the first resistive element. The second resistive element is between and electrically isolated from the first conductive feature and the second conductive feature. The semiconductor device structure further includes a first dielectric layer surrounding the first conductive feature and the second conductive feature.