The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2023
Filed:
Oct. 22, 2020
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Wen Xiao, Singapore, SG;
Sanjay Bhat, Singapore, SG;
Shiyu Liu, Singapore, SG;
Binni Varghese, Singapore, SG;
Vibhu Jindal, San Jose, CA (US);
Azeddine Zerrade, Singapore, SG;
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 1/22 (2012.01); C23C 14/34 (2006.01); H01J 37/34 (2006.01); C23C 14/06 (2006.01); H01J 37/32 (2006.01); C23C 14/00 (2006.01);
U.S. Cl.
CPC ...
G03F 1/22 (2013.01); C23C 14/0036 (2013.01); C23C 14/0652 (2013.01); C23C 14/0676 (2013.01); C23C 14/3464 (2013.01); H01J 37/32477 (2013.01); H01J 37/3429 (2013.01);
Abstract
Methods for the manufacture of extreme ultraviolet (EUV) mask blanks and production systems therefor are disclosed. A method for forming an EUV mask blank comprises forming a bilayer on a portion of a multi-cathode PVD chamber interior and then forming a multilayer stack of Si/Mo on a substrate in the multi-cathode PVD chamber.