The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2023

Filed:

Apr. 22, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Ming-Che Lee, Tainan, TW;

Sheng-Chau Chen, Tainan, TW;

I-Nan Chen, Taipei, TW;

Cheng-Hsien Chou, Tainan, TW;

Cheng-Yuan Tsai, Hsin-Chu County, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 23/31 (2006.01); H01L 27/01 (2006.01); H01L 23/00 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 28/10 (2013.01); H01L 23/3171 (2013.01); H01L 23/5227 (2013.01); H01L 24/05 (2013.01); H01L 27/01 (2013.01); H01L 2224/11 (2013.01);
Abstract

A semiconductor structure includes: a substrate; a first passivation layer over the substrate; a second passivation layer over the first passivation layer; and a magnetic core in the second passivation layer, wherein the magnetic core includes a first magnetic material layer and a second magnetic material layer over the first magnetic material layer, the first magnetic material layer and the second magnetic material layer are separated by a high resistance isolation layer, and the high resistance isolation layer has a resistivity greater than about 1.3 ohm-cm.


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