The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2023

Filed:

Oct. 28, 2019
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Krishna Vasanth Valavala, Chandler, AZ (US);

Ravindranath V. Mahajan, Chandler, AZ (US);

Chandra Mohan Jha, Tempe, AZ (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/38 (2006.01); H01L 23/42 (2006.01); H01L 23/367 (2006.01); H01L 23/10 (2006.01); H01L 21/48 (2006.01); H01L 25/065 (2023.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/38 (2013.01); H01L 21/4871 (2013.01); H01L 23/10 (2013.01); H01L 23/367 (2013.01); H01L 23/42 (2013.01); H01L 24/16 (2013.01); H01L 25/0655 (2013.01); H01L 25/0657 (2013.01); H01L 2224/16225 (2013.01);
Abstract

Embodiments include a semiconductor package with a thermoelectric cooler (TEC), a method to form such semiconductor package, and a semiconductor packaged system. The semiconductor package includes a die with a plurality of backend layers on a package substrate. The backend layers couple the die to the package substrate. The semiconductor package includes the TEC in the backend layers of the die. The TEC includes a plurality of N-type layers, a plurality of P-type layers, and first and second conductive layers. The first conductive layer is directly coupled to outer regions of bottom surfaces of the N-type and P-type layers, and the second conductive layer is directly coupled to inner regions of top surfaces of the N-type and P-type layers. The first conductive layer has a width greater than a width of the second conductive layer. The N-type and P-type layers are directly disposed between the first and second conductive layers.


Find Patent Forward Citations

Loading…