The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2023

Filed:

Jun. 02, 2022
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Masahiro Tabata, Miyagi, JP;

Yoshihide Kihara, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30655 (2013.01); H01L 21/0273 (2013.01); H01L 21/02211 (2013.01); H01L 21/3083 (2013.01); H01J 37/32165 (2013.01); H01J 2237/3342 (2013.01); H01L 21/02164 (2013.01); H01L 21/02274 (2013.01);
Abstract

An apparatus for processing a substrate is provided. The apparatus includes a chamber having at least one gas inlet and at least one gas outlet, a substrate support in the chamber, a plasma generator and a controller configured to cause (a) placing a substrate on the substrate support, the substrate including a target layer having a recess, (b) exposing the substrate to a silicon-containing precursor, thereby forming an adsorption layer on a sidewall of the recess, (c) generating a plasma from a gas mixture in the chamber, the gas mixture including an oxygen-containing gas and a halogen-containing gas, (d) exposing the substrate to the plasma, thereby forming a protection layer on the adsorption layer while etching a bottom of the recess and (e) repeating (b) to (d) in sequence.


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