The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2023
Filed:
May. 21, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Chun-Jen Hsiao, Hsinchu, TW;
Ya-Ping Chen, Hsinchu, TW;
Chien-Hung Lin, Hsinchu, TW;
Wen-Pin Liu, Hsinchu County, TW;
Chin-Wen Chen, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/027 (2006.01); G03F 7/42 (2006.01); B08B 7/00 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
B08B 7/0035 (2013.01); G03F 7/427 (2013.01); H01L 21/0273 (2013.01); H01J 37/32082 (2013.01); H01J 2237/335 (2013.01);
Abstract
A plasma ashing method is provided. The plasma ashing method includes analyzing the process status of each of a number of semiconductor substrate models undergoing a tested plasma ash process by a residue gas analyzer. The tested plasma ash processes for the semiconductor substrate models utilize a plurality of tested recipes. The plasma ashing method further includes selecting one of the tested recipes as a process recipe for a plasma ash process.